MERL is seeking a highly motivated, qualified individual to join our 3-month internship program to carry out research in the area of power electronics and RF semiconductors devices. The ideal candidate should have a significant background in the simulation and design of a 2D and 3D GaN devices using Matlab and TCAD. Proficiency in device semiconductor modeling or hands-on experience in GaN device fabrication processes and a deep knowledge of negative capacitance would be a great asset. Candidates who hold a PhD or in their senior years of a Ph.D. program are encouraged to apply. This internship is preferred to be onsite at MERL, but may be done remotely where you live if the COVID pandemic makes it necessary.
Research Areas: Electronic and Photonic Devices
Contact: Koon Hoo Teo
Mitsubishi Electric Research Labs, Inc. "MERL" provides equal employment opportunities (EEO) to all employees and applicants for employment without regard to race, color, religion, sex, national origin, age, disability or genetics. In addition to federal law requirements, MERL complies with applicable state and local laws governing nondiscrimination in employment in every location in which the company has facilities. This policy applies to all terms and conditions of employment, including recruiting, hiring, placement, promotion, termination, layoff, recall, transfer, leaves of absence, compensation and training.
MERL expressly prohibits any form of workplace harassment based on race, color, religion, gender, sexual orientation, gender identity or expression, national origin, age, genetic information, disability, or veteran status. Improper interference with the ability of MERL’s employees to perform their job duties may result in discipline up to and including discharge.